"SiN used as a Stressor in Germanium-On-Insulator Substrate."

Sethavut Duangchan et al. (2019)

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DOI: 10.1109/3DIC48104.2019.9058896

access: closed

type: Conference or Workshop Paper

metadata version: 2025-01-29

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Sethavut Duangchan, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima, Akiyoshi Baba:
SiN used as a Stressor in Germanium-On-Insulator Substrate. 3DIC 2019: 1-5

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