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ORCIDZhiqiang Wei 0005
Person information
- affiliation: Panasonic Corporation, Nagaokakyo, Japan
Other persons with the same name
- Zhiqiang Wei — disambiguation page
- Zhiqiang Wei 0001
![[0000-0003-3400-5590]](https://dblp.uni-trier.de./img/orcid-mark.12x12.png "0000-0003-3400-5590")
— Xi'an Jiaotong University, School of Mathematics and Statistics, Xi'an, China (and 3 more) - Zhiqiang Wei 0002 — Ocean University of China, Qingdao, China
- Zhiqiang Wei 0003 — Fuzhou University, Fujian Key Laboratory of Network Computing and Intelligent Information Processing, Fuzhou, China
- Zhiqiang Wei 0004 — Xi'an Electronics and Engineering Institute, Xi'an, China
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Journal Articles
- 2015
[j1]Takeki Ninomiya, Zhiqiang Wei, Shinichi Yoneda, Kenji Shiraishi:
Theoretical and Experimental Approaches to Select Resistive Switching Material. IEICE Trans. Electron. 98-C(1): 62-64 (2015)
Conference and Workshop Papers
- 2015
- [c5]Zhiqiang Wei, Koji Katayama, Shunsaku Muraoka, Ryutaro Yasuhara, Takumi Mikawa, Koji Eriguchi:
A new prediction method for ReRAM data retention statistics based on 3D filament structures. IRPS 2015: 5 - [c4]Yukio Hayakawa, Atsushi Himeno, Ryutaro Yasuhara, W. Boullart, E. Vecchio, T. Vandeweyer, T. Witters, D. Crotti, M. Jurczak, S. Fujii, S. Ito, Y. Kawashima, Yuuichirou Ikeda, Akifumi Kawahara, Ken Kawai, Zhiqiang Wei, Shunsaku Muraoka, Kazuhiko Shimakawa, Takumi Mikawa, Shinichi Yoneda:
Highly reliable TaOx ReRAM with centralized filament for 28-nm embedded application. VLSIC 2015: 14- - 2014
- [c3]Ken Kawai, Akifumi Kawahara, Ryutaro Yasuhara, Shunsaku Muraoka, Zhiqiang Wei, Ryotaro Azuma, Kouhei Tanabe, Kazuhiko Shimakawa:
Highly-reliable TaOx reram technology using automatic forming circuit. ICICDT 2014: 1-4 - [c2]Zhiqiang Wei, Ryutaro Yasuhara, Koji Katayama, Takumi Mikawa, Takeki Ninomiya, Shunsaku Muraoka:
Quantitative method for estimating characteristics of conductive filament in ReRAM. ISCAS 2014: 842-845 - 2013
- [c1]Akifumi Kawahara, Ken Kawai, Yuuichirou Ikeda, Yoshikazu Katoh, Ryotaro Azuma, Yuhei Yoshimoto, Kouhei Tanabe, Zhiqiang Wei, Takeki Ninomiya, Koji Katayama, Ryutaro Yasuhara, Shunsaku Muraoka, Atsushi Himeno, Naoki Yoshikawa, Hideaki Murase, Kazuhiko Shimakawa, Takeshi Takagi, Takumi Mikawa, Kunitoshi Aono:
Filament scaling forming technique and level-verify-write scheme with endurance over 107 cycles in ReRAM. ISSCC 2013: 220-221
Coauthor Index
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