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Journal Articles
- 2014
[j7]Takao Yamamoto, Masataka Miyake, Uwe Feldmann, Hans Jürgen Mattausch, Mitiko Miura-Mattausch:
Compact Modeling of Injection Enhanced Insulated Gate Bipolar Transistor Valid for Optimization of Switching Frequency. IEICE Trans. Electron. 97-C(10): 1021-1027 (2014)- 2013
- [j6]Takahiro Iizuka, Kenji Fukushima, Akihiro Tanaka, Hideyuki Kikuchihara, Masataka Miyake, Hans Jürgen Mattausch, Mitiko Miura-Mattausch:
Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation. IEICE Trans. Electron. 96-C(5): 744-751 (2013) - [j5]Chenyue Ma, Hans Jürgen Mattausch, Masataka Miyake, Takahiro Iizuka, Kazuya Matsuzawa, Seiichiro Yamaguchi, Teruhiko Hoshida, Akinori Kinoshita, Takahiko Arakawa, Jin He, Mitiko Miura-Mattausch:
Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions. IEICE Trans. Electron. 96-C(10): 1339-1347 (2013) - 2012
- [j4]Masataka Miyake, Junichi Nakashima, Mitiko Miura-Mattausch:
Compact Modeling of the p-i-n Diode Reverse Recovery Effect Valid for both Low and High Current-Density Conditions. IEICE Trans. Electron. 95-C(10): 1682-1688 (2012) - [j3]Takahiro Iizuka, Takashi Sakuda, Yasunori Oritsuki, Akihiro Tanaka, Masataka Miyake, Hideyuki Kikuchihara, Uwe Feldmann, Hans Jürgen Mattausch, Mitiko Miura-Mattausch:
Compact Modeling of Expansion Effects in LDMOS. IEICE Trans. Electron. 95-C(11): 1817-1823 (2012) - 2009
- [j2]Masataka Miyake, Daisuke Hori, Norio Sadachika, Uwe Feldmann, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Takahiro Iizuka, Kazuya Matsuzawa, Yasuyuki Sahara, Teruhiko Hoshida, Toshiro Tsukada:
Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation. IEICE Trans. Electron. 92-C(5): 608-615 (2009) - [j1]Masataka Miyake, Daisuke Hori, Norio Sadachika, Uwe Feldmann, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, Shunsuke Miyamoto:
Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors. IEICE Trans. Electron. 92-C(6): 777-784 (2009)
Conference and Workshop Papers
- 2013
- [c1]Masataka Miyake, Kai Matsuura, Akifumi Ueno:
Compact modeling of the diode reverse recovery effect for leading developments of power electronic applications. ASICON 2013: 1-4
Coauthor Index
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