"Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation."

Takahiro Iizuka et al. (2013)

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DOI: 10.1587/TRANSELE.E96.C.744

access: closed

type: Journal Article

metadata version: 2020-04-11

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Takahiro Iizuka, Kenji Fukushima, Akihiro Tanaka, Hideyuki Kikuchihara, Masataka Miyake, Hans Jürgen Mattausch, Mitiko Miura-Mattausch:
Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation. IEICE Trans. Electron. 96-C(5): 744-751 (2013)

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