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ORCIDMichael S. Obrecht
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- affiliation:
- affiliation: University of Waterloo, VLSI Research Group, Department of Electrical and Computer Engineering, ON, Canada
- affiliation: Russian Academy of Sciences, Institute of Pure and Applied Mechanics, Novosibirsk, Russia
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Journal Articles
- 2023
[j6]Michael S. Obrecht:
Simple Offset Elimination Technique for Two-Wire Measurements. IEEE Instrum. Meas. Mag. 26(5): 45-50 (2023)- 2004
- [j5]Oleg Semenov, Michael S. Obrecht, Manoj Sachdev:
Evaluation of STI degradation using temperature dependence of leakage current in parasitic STI MOSFET. Microelectron. Reliab. 44(9-11): 1751-1755 (2004) - 2000
- [j4]Abdellatif Bellaouar, Michael S. O'brecht, Amr M. Fahim, Mohamed I. Elmasry:
Low-power direct digital frequency synthesis for wireless communications. IEEE J. Solid State Circuits 35(3): 385-390 (2000) - 1998
- [j3]Michael S. Obrecht, Edwin L. Heasell, Jirí Vlach, Mohamed I. Elmasry:
Transient Phenomena in High Speed Bipolar Devices. VLSI Design 8(1-4): 475-480 (1998) - 1995
- [j2]Michael S. Obrecht, Mohamed I. Elmasry, Edwin L. Heasell:
TRASIM: compact and efficient two-dimensional transient simulator for arbitrary planar semiconductor devices. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 14(4): 447-458 (1995) - 1994
- [j1]Muhammad E. S. Elrabaa, Michael S. Obrecht, Mohamed I. Elmasry:
Novel low-voltage low-power full-swing BiCMOS circuits. IEEE J. Solid State Circuits 29(2): 86-94 (1994)
Conference and Workshop Papers
- 2000
- [c3]Eyad Abou-Allam, Tajinder Manku, Michele Ting, Michael S. Obrecht:
Impact of technology scaling on CMOS RF devices and circuits. CICC 2000: 361-364 - 1999
- [c2]Tajinder Manku, Michael S. Obrecht, Yi Lin:
RF simulations and physics of the channel noise parameters within MOS transistors. CICC 1999: 369-372 - [c1]Abdellatif Bellaouar, Michael S. Obrecht, Amr M. Fahim, Mohamed I. Elmasry:
A low-power direct digital frequency synthesizer architecture for wireless communications. CICC 1999: 593-596
Coauthor Index
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