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ORCIDKhalil Mafinezhad
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2020 – today
- 2024
[i1]Alireza Ghaneizadeh, Mojtaba Joodaki, Josef Börcsök, Khalil Mafinezhad:
A new extremely ultrathin metasurface energy harvester and its simple modelling based on resonant half-wave dipole antenna. CoRR abs/2407.13528 (2024)
2010 – 2019
- 2016
- [j17]Atefeh Gholipour, Bijan Zakeri, Khalil Mafinezhad:
Non-stationary additive noise modelling in direction-of-arrival estimation. IET Commun. 10(15): 2054-2059 (2016) - 2015
- [j16]Yasser Mafinejad, Abbas Z. Kouzani, M. Nassabi, Y. Lim, Khalil Mafinezhad:
Characterization and optimization to improve uneven surface on MEMS bridge fabrication. Displays 37: 54-61 (2015) - 2013
- [j15]Ehsan Kargaran, Negar Zoka, Yasser Mafinejad, Abbas Z. Kouzani, Khalil Mafinezhad:
An ultra low power OTA with improved unity gain bandwidth product. IEICE Electron. Express 10(20): 20130690 (2013) - [j14]Ehsan Kargaran, Negar Zoka, Abbas Z. Kouzani, Khalil Mafinezhad, Hooman Nabovati:
Highly linear low voltage low power CMOS LNA. IEICE Electron. Express 10(21): 20130557 (2013) - [j13]Ehsan Kargaran, Yasser Mafinejad, Khalil Mafinezhad, Hooman Nabovati:
A new gm-boosting current reuse CMOS folded cascode LNA. IEICE Electron. Express 10(24): 20130264 (2013) - [j12]Yasser Mafinejad, Majid Zarghami, Abbas Z. Kouzani, Khalil Mafinezhad:
Design and simulation of a high isolation RF MEMS shunt capacitive switch for C-K band. IEICE Electron. Express 10(24): 20130746 (2013) - 2012
- [j11]Majid Zarghami, Yasser Mafinejad, Abbas Z. Kouzani, Khalil Mafinezhad:
Low actuation-voltage shift in MEMS switch using ramp dual-pulse. IEICE Electron. Express 9(12): 1062-1068 (2012) - [j10]Masaoud Houshmand Kaffashian, Reza Lotfi, Khalil Mafinezhad, Hamid Mahmoodi
:
Impacts of NBTI/PBTI on performance of domino logic circuits with high-k metal-gate devices in nanoscale CMOS. Microelectron. Reliab. 52(8): 1655-1659 (2012) - [c12]Amin Pak, Yasser Mafinejad, Abbas Z. Kouzani, Hooman Nabovati, Khalil Mafinezhad:
Accurate modeling of low actuation voltage RFMEMS switches using artificial neural networks. ISCAS 2012: 3282-3284 - [c11]Sadegh Sabbagh, Khalil Mafinezhad:
4-6.3 GHz microwave tunable filter employing RF MEMS switches. IST 2012: 37-41 - [c10]Ali Reza Dehqan, Ehsan Kargaran, Khalil Mafinezhad, Hooman Nabovati:
An ultra low voltage ultra low power CMOS UWB LNA using forward body biasing. MWSCAS 2012: 266-269 - [c9]Ehsan Kargaran, Mohamad Sawan, Khalil Mafinezhad, Hooman Nabovati:
Design of 0.4V, 386nW OTA using DTMOS technique for biomedical applications. MWSCAS 2012: 270-273 - [c8]Ehsan Kargaran, Mohammad Reza Baghbanmanesh, Mohammad Mahdi Ravari, Ayub Soltani, Khalil Mafinezhad, Hooman Nabovati:
Gain increasing techniques for CMOS folded cascode LNAs at low voltage and low power operations. MWSCAS 2012: 701-705 - [c7]Ali Reza Dehqan, Ehsan Kargaran, Khalil Mafinezhad, Hooman Nabovati:
Design of 0.45V, 1.3mW ultra high gain CMOS LNA using gm-boosting and forward body biasing technique. MWSCAS 2012: 722-725 - 2011
- [j9]Hamidreza Rezaee-Dehsorkh, Nassim Ravanshad, Reza Lotfi, Khalil Mafinezhad, Amir M. Sodagar:
Analysis and Design of Tunable Amplifiers for Implantable Neural Recording Applications. IEEE J. Emerg. Sel. Topics Circuits Syst. 1(4): 546-556 (2011) - [j8]Mehdi Saberi, Hassan Sepehrian, Reza Lotfi, Khalil Mafinezhad:
A low-power Successive Approximation ADC for biomedical applications. IEICE Electron. Express 8(4): 195-201 (2011) - [j7]Masaoud Houshmand Kaffashian, Reza Lotfi, Khalil Mafinezhad, Hamid Mahmoodi:
An optimization method for NBTI-aware design of domino logic circuits in nano-scale CMOS. IEICE Electron. Express 8(17): 1406-1411 (2011) - [j6]Masaoud Houshmand Kaffashian, Reza Lotfi, Khalil Mafinezhad, Hamid Mahmoodi:
Impact of NBTI on performance of domino logic circuits in nano-scale CMOS. Microelectron. J. 42(12): 1327-1334 (2011) - [j5]Mehdi Saberi, Reza Lotfi, Khalil Mafinezhad, Wouter A. Serdijn:
Analysis of Power Consumption and Linearity in Capacitive Digital-to-Analog Converters Used in Successive Approximation ADCs. IEEE Trans. Circuits Syst. I Regul. Pap. 58-I(8): 1736-1748 (2011) - [c6]Ali Reza Dehqan, Khalil Mafinezhad, Ehsan Kargaran, Hooman Nabovati:
Design of low voltage low power dual-band LNA with forward body biasing technique. ICECS 2011: 591-594 - 2010
- [c5]Parvin Bahmanyar, Khalil Mafinezhad, Mostafa Bahmanyar:
Switching performance analysis in RF MEMS capacitive shunt switches by geometric parameters trade-offs. APCCAS 2010: 831-834 - [c4]Hamed Aminzadeh, Reza Lotfi, Khalil Mafinezhad:
Low-dropout voltage reference: An approach to buffered architectures with low sensitivity. ISCAS 2010: 849-852
2000 – 2009
- 2009
- [j4]Yasser Mafinejad, Abbas Z. Kouzani, Khalil Mafinezhad, Abbas Golmakani:
Pi-shaped MEMS architecture for lowering actuation voltage of RF switching. IEICE Electron. Express 6(20): 1483-1489 (2009) - [j3]Mojtaba Daliri, Mohammad Maymandi-Nejad, Khalil Mafinezhad:
Distortion analysis of bootstrap switch using volterra series. IET Circuits Devices Syst. 3(6): 359-364 (2009) - [j2]Hamidreza Rezaee-Dehsorkh, Nassim Ravanshad, Reza Lotfi, Khalil Mafinezhad:
Modified Model for Settling Behavior of Operational Amplifiers in Nanoscale CMOS. IEEE Trans. Circuits Syst. II Express Briefs 56-II(5): 384-388 (2009) - [c3]Yasser Mafinejad, Abbas Z. Kouzani, Khalil Mafinezhad, H. Nabovatti:
Design and Simulation of a Low Voltage Wide Band RF MEMS Switch. SMC 2009: 4623-4627 - 2008
- [j1]Hamed Aminzadeh, Reza Lotfi, Khalil Mafinezhad:
Low-cost area-efficient low-dropout regulators using MOSFET capacitors. IEICE Electron. Express 5(16): 610-616 (2008) - [c2]Hamed Aminzadeh, Khalil Mafinezhad:
On the power efficiency of cascode compensation over Miller compensation in two-stage operational amplifiers. ISLPED 2008: 283-288 - [c1]Hamed Aminzadeh, Reza Lotfi, Khalil Mafinezhad:
Area-efficient low-cost low-dropout regulators using MOS capacitors. SoC 2008: 1-4
Coauthor Index
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