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Journal Articles
- 2011
[j8]Ran Yan, Abhinav Kranti, Isabelle Ferain, Chi-Woo Lee, Ran Yu, Nima Dehdashti
, Pedram Razavi, Jean-Pierre Colinge:
Investigation of high-performance sub-50 nm junctionless nanowire transistors. Microelectron. Reliab. 51(7): 1166-1171 (2011)- [j7]Isabelle Ferain, Cynthia A. Colinge, Jean-Pierre Colinge:
Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors. Nat. 479(7373): 310-316 (2011) - 2009
- [j6]Chi-Woo Lee, Isabelle Ferain, Aryan Afzalian, Ran Yan, Nima Dehdashti, Pedram Razavi, Jean-Pierre Colinge, Jong Tae Park:
NBTI and hot-carrier effects in accumulation-mode Pi-gate pMOSFETs. Microelectron. Reliab. 49(9-11): 1044-1047 (2009) - 2004
- [j5]Se Re Na Yun, Chong-Gun Yu, Seok Hee Jeon, Chungkyue Kim, Jong Tae Park, Jean-Pierre Colinge:
Reduced Hot Carrier Effects in Self-Aligned Ground-Plane FDSOI MOSFET's. Microelectron. Reliab. 44(9-11): 1649-1654 (2004) - 2003
- [j4]Jong Tae Park, Nag Jong Choi, Chong-Gun Yu, Seok Hee Jeon, Jean-Pierre Colinge:
Increased hot carrier effects in Gate-All-Around SOI nMOSFET's. Microelectron. Reliab. 43(9-11): 1427-1432 (2003) - 2001
- [j3]Xiaohui Tang, Xavier Baie, Jean-Pierre Colinge, Pierre Loumaye, Christian Renaux, Vincent Bayot:
Influence of device geometry on SOI single-hole transistor characteristics. Microelectron. Reliab. 41(11): 1841-1846 (2001) - 1998
- [j2]Jean-Paul Eggermont, Denis Flandre, Jean-Pierre Raskin, Jean-Pierre Colinge:
Potential and modeling of 1-μm SOI CMOS operational transconductance amplifiers for applications up to 1 GHz. IEEE J. Solid State Circuits 33(4): 640-643 (1998) - 1996
- [j1]Jean-Paul Eggennont, Denis De Ceuster, Denis Flandre, Bernard Gentinne, Paul G. A. Jespers, Jean-Pierre Colinge:
Design of SOI CMOS operational amplifiers for applications up to 300°C. IEEE J. Solid State Circuits 31(2): 179-186 (1996)
Conference and Workshop Papers
- 2013
- [c1]Jean-Pierre Colinge, Sang H. Dhong:
Prospective for nanowire transistors. CICC 2013: 1-8
Coauthor Index
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