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2020 – today
- 2022
[j11]Seong Eun Kim, Min-Hwi Kim, Jisu Jang, Hyungjin Kim, Sungjun Kim, Jaewon Jang, Jin-Hyuk Bae, In Man Kang, Sin-Hyung Lee
:
Systematic Engineering of Metal Ion Injection in Memristors for Complex Neuromorphic Computing with High Energy Efficiency. Adv. Intell. Syst. 4(9) (2022)- 2021
- [j10]Sang Ho Lee, Won Douk Jang, Young Jun Yoon, Jae Hwa Seo, Hye Jin Mun, Min Su Cho, Jaewon Jang, Jin-Hyuk Bae, In Man Kang:
Polycrystalline-Silicon-MOSFET-Based Capacitorless DRAM With Grain Boundaries and Its Performances. IEEE Access 9: 50281-50290 (2021) - [j9]Jin Park, Min Su Cho, Sang Ho Lee, Hee Dae An, So Ra Min, Geon Uk Kim, Young Jun Yoon, Jae Hwa Seo, Sin-Hyung Lee, Jaewon Jang, Jin-Hyuk Bae, In Man Kang:
Design of Capacitorless DRAM Based on Polycrystalline Silicon Nanotube Structure. IEEE Access 9: 163675-163685 (2021) - 2020
- [j8]Bongho Jang, Hongki Kang, Won-Yong Lee, Jin-Hyuk Bae, In Man Kang, Kwangeun Kim, Hyuk-Jun Kwon, Jaewon Jang:
Enhancement Mode Flexible SnO2 Thin Film Transistors Via a UV/Ozone-Assisted Sol-Gel Approach. IEEE Access 8: 123013-123018 (2020) - [j7]Min Su Cho, Jae Hwa Seo, Sang Ho Lee, Hwan Soo Jang, In Man Kang:
Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance. IEEE Access 8: 139156-139160 (2020)
2010 – 2019
- 2019
- [i1]Premkumar Vincent, Gwenaelle Cunha Sergio, Jaewon Jang, In Man Kang, Philippe Lang, Hyeok Kim, Jaehoon Park, Muhan Choi, Minho Lee, Jin-Hyuk Bae:
Employing Genetic Algorithm as an Efficient Alternative to Parameter Sweep Based Multi-Layer Thickness Optimization in Solar Cells. CoRR abs/1909.06447 (2019) - 2016
- [c5]Ki-Sik Im, Chul-Ho Won, Jae Hwa Seo, In Man Kang, Sindhuri Vodapally, Yong Soo Lee, Jung-Hee Lee, Yong-Tae Kim, Sorin Cristoloveanu:
Novel AlGaN/GaN omega-FinFETs with excellent device performances. ESSDERC 2016: 323-326 - [c4]Young Jun Yoon, Jae Hwa Seo, Ra Hee Kwon, Young In Jang, In Man Kang:
InGaAs-based junctionless transistor with dual-spacer dielectric for low power loss and high frequency mobile network system. ICOIN 2016: 436-438 - [c3]Jae Hwa Seo, Young Jun Yoon, Ra Hee Kwon, Young In Jang, In Man Kang:
Design optimization of Si/Ge-based heterojunction arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET) which applicable for future mobile communication systems. ICOIN 2016: 442-444 - 2015
- [c2]Dong-Hyeok Son, Young-woo Jo, Ryun-Hwi Kim, Chan Heo, Jae Hwa Seo, Jin Su Kim, In Man Kang, Sorin Cristoloveanu, Jung-Hee Lee:
Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution. ESSDERC 2015: 130-133 - [c1]Jae Hwa Seo, Young Jun Yoon, Sung Yoon Kim, Young Jae Kim, In Man Kang:
RF performance of InGaAs-based T-gate junctionless field-effect transistors which applicable for high frequency network systems. ICOIN 2015: 519-520 - 2014
- [j6]Sung Yun Woo, Young Jun Yoon, Jae Hwa Seo, Gwan Min Yoo, Seongjae Cho, In Man Kang:
InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate. IEICE Trans. Electron. 97-C(7): 677-682 (2014) - 2013
- [j5]Jae Hwa Seo, Jae Sung Lee, Yun Soo Park, Jung-Hee Lee, In Man Kang:
Rigorous Design and Analysis of Tunneling Field-Effect Transistor with Hetero-Gate-Dielectric and Tunneling-Boost n-Layer. IEICE Trans. Electron. 96-C(5): 644-648 (2013) - 2012
- [j4]Seongjae Cho, Hyungjin Kim, Min-Chul Sun, In Man Kang, Byung-Gook Park, James S. Harris Jr.:
Simulation study on scaling limit of silicon tunneling field-effect transistor under tunneling-predominance. IEICE Electron. Express 9(9): 828-833 (2012) - [j3]Jae Sung Lee, In Man Kang:
Performance of Gate-All-Around Tunneling Field-Effect Transistors Based on Si1-x Gex Layer. IEICE Trans. Electron. 95-C(5): 814-819 (2012) - 2010
- [j2]Seongjae Cho, In Man Kang, Kyung Rok Kim:
Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs. IEICE Electron. Express 7(19): 1499-1503 (2010)
2000 – 2009
- 2004
- [j1]Hyuck In Kwon, In Man Kang, Byung-Gook Park, Jong Duk Lee, Sang Sik Park, Jung Chak Ahn, Yong Hee Lee:
Effects of electrical stress on mid-gap interface trap density and capture cross sections in n-MOSFETs characterized by pulsed interface probing measurements. Microelectron. Reliab. 44(1): 47-51 (2004)
Coauthor Index
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