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Journal Articles
- 2019
[j7]Henry Park, Seçil Gönültas
, Kelly Lynn Mulvey, Melanie Killen, Martin D. Ruck:
Male Adolescents' and Young Adults' Evaluations of Interracial Exclusion in Offline and Online Settings. Cyberpsychology Behav. Soc. Netw. 22(10): 641-647 (2019)- 2016
- [j6]Namik Kocaman, Tamer A. Ali, Lakshmi P. Rao, Ullas Singh, Mohammed M. Abdul-Latif, Yang Liu, Amr Amin Hafez, Henry Park, Anand Vasani, Zhi Huang, Arvindh Iyer, Bo Zhang, Afshin Momtaz:
A 3.8 mW/Gbps Quad-Channel 8.5-13 Gbps Serial Link With a 5 Tap DFE and a 4 Tap Transmit FFE in 28 nm CMOS. IEEE J. Solid State Circuits 51(4): 881-892 (2016) - 2014
- [j5]Henry Park, Chih-Kong Ken Yang:
Stability Estimation of a 6T-SRAM Cell Using a Nonlinear Regression. IEEE Trans. Very Large Scale Integr. Syst. 22(1): 27-38 (2014) - 2013
- [j4]Henry Park, Chih-Kong Ken Yang:
In Situ SRAM Static Stability Estimation in 65-nm CMOS. IEEE J. Solid State Circuits 48(10): 2541-2549 (2013) - [j3]Henry Park, Chih-Kong Ken Yang:
An INL Yield Model of the Digital-to-Analog Converter. IEEE Trans. Circuits Syst. I Regul. Pap. 60-I(3): 582-592 (2013) - [j2]Fengbo Ren, Henry Park, Chih-Kong Ken Yang, Dejan Markovic:
Reference Calibration of Body-Voltage Sensing Circuit for High-Speed STT-RAMs. IEEE Trans. Circuits Syst. I Regul. Pap. 60-I(11): 2932-2939 (2013) - 2012
- [j1]Henry Park, Chih-Kong Ken Yang:
Nearly Exact Analytical Formulation of the DNL Yield of the Digital-to-Analog Converter. IEEE Trans. Circuits Syst. II Express Briefs 59-II(9): 563-567 (2012)
Conference and Workshop Papers
- 2023
- [c9]Henry Park, Mohammed Abdullatif, Ehung Chen, Ahmed Elmallah, Qaiser Nehal, Miguel Gandara, Tsz-Bin Liu, Amr Khashaba, Joonyeong Lee, Chih-Yi Kuan, Dhinessh Ramachandran, Ruey-Bo Sun, Atharav Atharav, Yusang Chun, Mantian Zhang, Deng-Fu Weng, Chung-Hsien Tsai, Chen-Hao Chang, Chia-Sheng Peng, Sheng-Tsung Hsu, Tamer A. Ali:
A 4.63pJ/b 112Gb/s DSP-Based PAM-4 Transceiver for a Large-Scale Switch in 5nm FinFET. ISSCC 2023: 110-111 - 2021
- [c8]Tamer A. Ali, Mohammed Abdullatif, Henry Park, Ehung Chen, Ramy Awad, Miguel Gandara:
56/112Gbps Wireline Transceivers for Next Generation Data Centers on 7nm FINFET CMOS Technology. CICC 2021: 1-6 - 2020
- [c7]Tamer A. Ali, Ehung Chen, Henry Park, Ramy Yousry, Yu-Ming Ying, Mohammed Abdullatif, Miguel Gandara, Chun-Cheng Liu, Po-Shuan Weng, Huan-Sheng Chen, Mohammad Elbadry, Qaiser Nehal, Kun-Hung Tsai, Kevin Tan, Yi-Chieh Huang, Chung-Hsien Tsai, Yuyun Chang, Yuan-Hao Tung:
6.2 A 460mW 112Gb/s DSP-Based Transceiver with 38dB Loss Compensation for Next-Generation Data Centers in 7nm FinFET Technology. ISSCC 2020: 118-120 - 2019
- [c6]Tamer A. Ali, Ramy Yousry, Henry Park, Ehung Chen, Po-Shuan Weng, Yi-Chieh Huang, Chun-Cheng Liu, Chien-Hua Wu, Shih-Hao Huang, Chungshi Lin, Ke-Chung Wu, Kun-Hung Tsai, Kai-Wen Tan, Ahmed ElShater, Kuang-Ren Chen, Wei-Hao Tsai, Huan-Sheng Chen, Weiyu Leng, Mazen Soliman:
A 180mW 56Gb/s DSP-Based Transceiver for High Density IOs in Data Center Switches in 7nm FinFET Technology. ISSCC 2019: 118-120 - 2016
- [c5]Bharath Raghavan, Aida Varzaghani, Lakshmi P. Rao, Henry Park, Xiaochen Yang, Zhi Huang, Yu Chen, Rama Kattamuri, Chunhui Wu, Bo Zhang, Jun Cao, Afshin Momtaz, Namik Kocaman:
A 125 mW 8.5-11.5 Gb/s serial link transceiver with a dual path 6-bit ADC/5-tap DFE receiver and a 4-tap FFE transmitter in 28 nm CMOS. VLSI Circuits 2016: 1-2 - 2015
- [c4]Tamer A. Ali, Lakshmi P. Rao, Ullas Singh, Mohammed M. Abdul-Latif, Yang Liu, Amr Amin Hafez, Henry Park, Anand Vasani, Zhi Huang, Arvindh Iyer, Bo Zhang, Afshin Momtaz, Namik Kocaman:
A 3.8 mW/Gbps quad-channel 8.5-13 Gbps serial link with a 5-tap DFE and a 4-tap transmit FFE in 28 nm CMOS. VLSIC 2015: 348- - 2013
- [c3]Ramy Yousry, Henry Park, E-Hung Chen, Chih-Kong Ken Yang:
A digitally-calibrated 10GS/s reconfigurable flash ADC in 65-nm CMOS. ISCAS 2013: 2443-2447 - 2012
- [c2]Fengbo Ren, Henry Park, Richard Dorrance, Yuta Toriyama, Chih-Kong Ken Yang, Dejan Markovic:
A body-voltage-sensing-based short pulse reading circuit for spin-torque transfer RAMs (STT-RAMs). ISQED 2012: 275-282 - 2011
- [c1]Henry Park, Richard Dorrance, Amr Amin Hafez, Fengbo Ren, Dejan Markovic, Chih-Kong Ken Yang:
Analysis of STT-RAM cell design with multiple MTJs per access. NANOARCH 2011: 53-58
Coauthor Index
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