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ORCIDPedro M. Santos 0001
Person information
- affiliation: Academia Militar, Lisbon, Portugal
- affiliation (PhD 2002): Universidade Técnica de Lisboa, Instituto Superior Técnico, Lisbon, Portugal
Other persons with the same name
- Pedro M. Santos
- Pedro M. Santos 0002
![[0000-0002-7162-0560]](https://dblp.uni-trier.de./img/orcid-mark.12x12.png "0000-0002-7162-0560")
(aka: Pedro Miguel Salgueiro dos Santos) — Instituto Superior de Engenharia do Porto, Portugal (and 1 more) - Pedro M. Santos 0003 — University of Minho, Braga, Portugal (and 2 more)
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2010 – 2019
- 2019
[j5]Duarte Batista, Luís Bica Oliveira, Nuno Paulino, Carlos Carvalho, João Pedro Oliveira, Joana Farinhas, Ana Charas, Pedro Mendonça dos Santos:
Combined Organic Photovoltaic Cells and Ultra Low Power CMOS Circuit for Indoor Light Energy Harvesting. Sensors 19(8): 1803 (2019)- 2016
- [j4]Pedro Mendonça dos Santos, Luís Mendes, João Caldinhas Vaz:
Substrate noise isolation improvement in a single-well standard CMOS process. Integr. 52: 122-128 (2016) - 2012
- [j3]Vítor Costa, Pedro Mendonça dos Santos, Beatriz Vieira Borges:
A design methodology for integrated inductor-based DC-DC converters. Microelectron. J. 43(6): 401-409 (2012)
2000 – 2009
- 2009
- [c4]Celso Ribeiro, Paulo J. Gomes, Paulo A. Ribeiro, Maria Raposo, Hugo Águas, Pedro Mendonça dos Santos, Beatriz Vieira Borges, Pedro Brogueira:
Polymeric Film Sensors based on PAH-PAZO Ionic Self-assembled Multi-nanolayers. BIODEVICES 2009: 458-461 - 2008
- [c3]Vítor Costa, Pedro M. Santos, Beatriz Vieira Borges:
Design method for monolithic DC-DC converters based on the losses optimization of the power stage. APCCAS 2008: 1872-1875 - 2007
- [j2]Pedro M. Santos, Vítor Costa, M. C. Gomes, Beatriz Vieira Borges, Mário Lança:
High-voltage LDMOS transistors fully compatible with a deep-submicron 0.35mum CMOS process. Microelectron. J. 38(1): 35-40 (2007) - 2005
- [c2]Henrique Jorge Quaresma, Pedro M. Santos, Antonio M. Cruz Serra, Etienne Sicard:
A methodology for extracting unknown integrated circuit process parameters. ICECS 2005: 1-4 - 2004
- [j1]Pedro M. Santos, Henrique Jorge Quaresma, A. P. Silva, Mário Lança:
High-voltage NMOS design in fully implanted twin-well CMOS. Microelectron. J. 35(9): 723-730 (2004)
1990 – 1999
- 1998
- [c1]Saulo Finco, P. Tavares, Pedro M. Santos, A. P. Casimiro, Frank Herman Behrens, Mário Lança, Maria Inês Castro Simas:
A cost effective smart power approach with NMOS based blocks in standard CMOS technology. ICECS 1998: 135-138
Coauthor Index
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