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ORCIDMiguel Urteaga
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Journal Articles
- 2017
[j8]Seong-Kyun Kim
, Robert Maurer, Arda Simsek, Miguel Urteaga, Mark J. W. Rodwell:
An Ultra-Low-Power Dual-Polarization Transceiver Front-End for 94-GHz Phased Arrays in 130-nm InP HBT. IEEE J. Solid State Circuits 52(9): 2267-2276 (2017)- [j7]Miguel Urteaga, Zach Griffith, Munkyo Seo, Jonathan Hacker, Mark J. W. Rodwell:
InP HBT Technologies for THz Integrated Circuits. Proc. IEEE 105(6): 1051-1067 (2017) - 2015
- [j6]Munkyo Seo, John Hacker, Miguel Urteaga, Anders Skalare, Mark J. W. Rodwell:
A 529 GHz dynamic frequency divider in 130 nm InP HBT process. IEICE Electron. Express 12(3): 20141118 (2015) - 2014
- [j5]Hyun-Chul Park, Saeid Daneshgar, Zach Griffith, Miguel Urteaga, Byung-Sung Kim, Mark J. W. Rodwell:
Millimeter-Wave Series Power Combining Using Sub-Quarter-Wavelength Baluns. IEEE J. Solid State Circuits 49(10): 2089-2102 (2014) - 2011
- [j4]Munkyo Seo, Miguel Urteaga, Jonathan Hacker, Adam Young, Zach Griffith, Vibhor Jain, Richard Pierson, Petra Rowell, Anders Skalare, Alejandro Peralta, Robert Lin, David Pukala, Mark J. W. Rodwell:
InP HBT IC Technology for Terahertz Frequencies: Fundamental Oscillators Up to 0.57 THz. IEEE J. Solid State Circuits 46(10): 2203-2214 (2011) - 2005
- [j3]Zach Griffith, Yingda Dong, Dennis W. Scott, Yun Wei, Navin Parthasarathy, Mattias Dahlström, Christoph Kadow, Vamsi Paidi, Mark J. W. Rodwell, Miguel Urteaga, Richard Pierson, Petra Rowell, Bobby Brar, Sangmin Lee, Nguyen X. Nguyen, Chahn Nguyen:
Transistor and circuit design for 100-200-GHz ICs. IEEE J. Solid State Circuits 40(10): 2061-2069 (2005) - 2003
- [j2]Miguel Urteaga, Dennis W. Scott, Sundararajan Krishnan, Yun Wei, Mattias Dahlström, Zach Griffith, Navin Parthasarathy, Mark J. W. Rodwell:
G-band (140-220-GHz) InP-based HBT amplifiers. IEEE J. Solid State Circuits 38(9): 1451-1456 (2003) - 2001
- [j1]Shrinivasan Jaganathan, Sundararajan Krishnan, Dino Mensa, Thomas Mathew, Yoram Betser, Yun Wei, Dennis W. Scott, Miguel Urteaga, Mark J. W. Rodwell:
An 18-GHz continuous-time Σ-Δ analog-digital converter implemented in InP-transferred substrate HBT technology. IEEE J. Solid State Circuits 36(9): 1343-1350 (2001)
Conference and Workshop Papers
- 2024
- [c11]Eythan Lam, Jeff Shieh-Chieh Chien, Petra Rowell, Miguel Urteaga, James F. Buckwalter:
A Two-stage, Two-way-combined, 220-GHz Power Amplifier With 17.1% PAE in a 250-nm InP HBT Process. BCICTS 2024: 189-192 - 2023
- [c10]Rob D. Jones, Jerome Cheron, Bryan T. L. Bosworth, Benjamin F. Jamroz, Dylan F. Williams, Miguel E. Urteaga, Ari D. Feldman, Peter H. Aaen:
Microstrip and Grounded CPW Calibration Kit Comparison for On-Wafer Transistor Characterization from 220 GHz to 325 GHz. BCICTS 2023: 124-127 - 2022
- [c9]Miguel Urteaga, Zach Griffith, A. Arias-Purdue, A. Carter, Petra Rowell, J. Hacker, B. Brar:
InP HBT Technologies for sub-THz Communications. VLSI Technology and Circuits 2022: 122-123 - 2021
- [c8]Jerome Cheron, Rob D. Jones, Richard A. Chamberlin, Dylan F. Williams, Miguel E. Urteaga, Kassiopeia A. Smith, Nicholas R. Jungwirth, Bryan T. L. Bosworth, Christian J. Long, Nathan D. Orloff, Peter H. Aaen, Ari D. Feldman:
High-Gain 500-GHz InP HBT Power Amplifiers. BCICTS 2021: 1-4 - 2019
- [c7]Zach Griffith, Miguel Urteaga, Petra Rowell, Lan Tran, Bobby Brar:
50 - 250 GHz High-Gain Power Amplifier MMICs in 250-nm InP HBT. BCICTS 2019: 1-6 - [c6]Jonathan P. Sculley, Brian Markman, Utku Soylu, Yihao Fang, Miguel E. Urteaga, Andy D. Carter, Mark J. W. Rodwell, Paul D. Yoder:
Monte Carlo Investigation of Traveling Accumulation Layers in InP Heterojunction Bipolar Transistor Power Amplifiers. BCICTS 2019: 1-4 - [c5]Andrew D. Carter, Miguel E. Urteaga, Petra Rowell, Joshua Bergman, Andrea Arias:
Microtransfer-Printed InGaAs/InP HBTs Utilizing a Vertical Metal Sub-Collector Contact. DRC 2019: 45-46 - [c4]Jonathan P. Sculley, Yihao Fang, Brian Markman, Miguel E. Urteaga, Andy D. Carter, Mark J. W. Rodwell, Paul D. Yoder:
First Principles Study of Collector Transit Time Modulation in Double Heterojunction Bipolar Transistors. DRC 2019: 105-106 - [c3]Arda Simsek, Seong-Kyun Kim, Ahmed S. H. Ahmed, Robert Maurer, Miguel Urteaga, Mark J. W. Rodwell:
A Dual-Conversion Front-End with a W-Band First Intermediate Frequency for 1-30 GHz Reconfigurable Transceivers. RWS 2019: 1-4 - 2018
- [c2]Ahmed S. H. Ahmed, Arda Simsek, Miguel Urteaga, Mark J. W. Rodwell:
8.6-13.6 mW Series-Connected Power Amplifiers Designed at 325 GHz Using 130 nm InP HBT Technology. BCICTS 2018: 164-167 - [c1]Yihao Fang, Jonathan P. Sculley, Miguel E. Urteaga, Andy D. Carter, Paul D. Yoder, Mark J. W. Rodwell:
Design of InP Segmented-collector DHBTs with Reduced Collector Transit Time τc for Large Power Bandwidth Power Amplifiers. DRC 2018: 1-2
Coauthor Index
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