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William J. Schaff

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2010 – 2019

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2010
[j3]
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  - journals/pieee/HofstetterBGTWSDGERKGM10
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  - https://dblp.org/rec/journals/pieee/HofstetterBGTWSDGERKGM10
Daniel Hofstetter, Esther Baumann, Fabrizio Raphael Giorgetta, Ricardo Théron, Hong Wu, William J. Schaff, Jahan Dawlaty, Paul A. George, Lester F. Eastman, Farhan Rana, Prem K. Kandaswamy, Fabien Guillot, Eva Monroy:
Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures. Proc. IEEE 98(7): 1234-1248 (2010)

2000 – 2009

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2009
[j2]
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  - journals/mj/BrannickZRESS09
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A. Brannick, N. A. Zakhleniuk, B. K. Ridley, Lester F. Eastman, James R. Shealy, William J. Schaff:
Hydrodynamic simulation of surface traps in the AlGaN/GaN HEMT. Microelectron. J. 40(3): 410-412 (2009)
[j1]
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M. Gunes, N. Balkan, D. Zanato, William J. Schaff:
A comparative study of electrical and optical properties of InN and In_0.48Ga_0.52N. Microelectron. J. 40(4-5): 872-874 (2009)

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