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2010 – 2019
- 2018
[c2]Ki Chul Chun, Yonggyu Chu, Jin-Seok Heo, Tae-Sung Kim, Soohwan Kim, Hui-Kap Yang, Mi-Jo Kim, Chang-Kyo Lee, Ju-Hwan Kim, Hyunchul Yoon, Chang-Ho Shin, Sang-uhn Cha, Hyung-Jin Kim, Young-Sik Kim, Kyungryun Kim, Young-Ju Kim, Won-Jun Choi, Daesik Yim, Inkyu Moon, Young-Ju Kim, Junha Lee, Young Choi, Yongmin Kwon, Sung-Won Choi, Jung-Wook Kim, Yoon-Suk Park, Woongdae Kang, Jinil Chung, Seunghyun Kim, Yesin Ryu, Seong-Jin Cho, Hoon Shin, Hangyun Jung, Sanghyuk Kwon, Kyuchang Kang, Jongmyung Lee, Yujung Song, Youngjae Kim, Eun-Ah Kim, Kyung-Soo Ha, Kyoung-Ho Kim, Seok-Hun Hyun, Seung-Bum Ko, Jung-Hwan Choi, Young-Soo Sohn, Kwang-Il Park, Seong-Jin Jang:
A 16Gb LPDDR4X SDRAM with an NBTI-tolerant circuit solution, an SWD PMOS GIDL reduction technique, an adaptive gear-down scheme and a metastable-free DQS aligner in a 10nm class DRAM process. ISSCC 2018: 206-208- 2013
- [j1]Kyomin Sohn, Taesik Na, Indal Song, Yong Shim, Wonil Bae, Sanghee Kang, Dongsu Lee, Hangyun Jung, Seok-Hun Hyun, Hanki Jeoung, Ki Won Lee, Jun-Seok Park, Jongeun Lee, Byunghyun Lee, Inwoo Jun, Juseop Park, Junghwan Park, Hundai Choi, Sanghee Kim, Haeyoung Chung, Young Choi, Dae-Hee Jung, Byungchul Kim, Jung-Hwan Choi, Seong-Jin Jang, Chi-Wook Kim, Jung-Bae Lee, Joo-Sun Choi:
A 1.2 V 30 nm 3.2 Gb/s/pin 4 Gb DDR4 SDRAM With Dual-Error Detection and PVT-Tolerant Data-Fetch Scheme. IEEE J. Solid State Circuits 48(1): 168-177 (2013) - 2012
- [c1]Kyomin Sohn, Taesik Na, Indal Song, Yong Shim, Wonil Bae, Sanghee Kang, Dongsu Lee, Hangyun Jung, Hanki Jeoung, Ki Won Lee, Junsuk Park, Jongeun Lee, Byunghyun Lee, Inwoo Jun, Juseop Park, Junghwan Park, Hundai Choi, Sanghee Kim, Haeyoung Chung, Young Choi, Dae-Hee Jung, Jang Seok Choi, Byung-Sick Moon, Jung-Hwan Choi, Byungchul Kim, Seong-Jin Jang, Joo-Sun Choi, Kyungseok Oh:
A 1.2V 30nm 3.2Gb/s/pin 4Gb DDR4 SDRAM with dual-error detection and PVT-tolerant data-fetch scheme. ISSCC 2012: 38-40
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