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2020 – today
- 2024
[c4]Sven Beyer, Dominik Kleimaier, Stefan Dünkel, Halid Mulaosmanovic, Steven Soss, Johannes Müller, Zhouhang Jiang, Kai Ni, Thomas Mikolajick
, Haidi Zhou:
Charge trapping challenges of CMOS embedded complementary FeFETs. IMW 2024: 1-4- [i1]Zijian Zhao, Sola Woo, Khandker Akif Aabrar, Sharadindu Gopal Kirtania, Zhouhang Jiang, Shan Deng, Yi Xiao, Halid Mulaosmanovic, Stefan Dünkel, Dominik Kleimaier, Steven Soss, Sven Beyer, Rajiv V. Joshi, Scott Meninger, Mohamed Mohamed, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Vijaykrishnan Narayanan, Suman Datta, Shimeng Yu, Kai Ni:
Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate. CoRR abs/2403.04981 (2024) - 2022
- [c3]Johannes Müller, Aleksandra Titova, Hongsik Yoon, Thomas Merbeth, Martin Weisheit, Georg Wolf, Sanjeeb Bharali, Bert Pfefferling, Yuichi Otani, Tetyana Shapoval, Alberto Cagliani, Ferenc Vajda, Pedram Sadeghi, Christiana Villas-Boas Grimm, Frank Krause, Ines Altendorf, Gabriele Congedo, Robert Binder, Joachim Metzger, Alexander Lajn, Markus Langner, Young Seon You, Oliver Kallensee, Vinayak Bharat Naik, Kazutaka Yamane, Steven Soss:
From Emergence to Prevalence: 22FDX® Embedded STT-MRAM. IMW 2022: 1-4 - [c2]Vinayak Bharat Naik, J. H. Lim, Kazutaka Yamane, J. Kwon, Behin-Aein B., N. L. Chung, S. K, R. Chao, C. Chiang, Y. Huang, L. Pu, Yuichi Otani, Suk Hee Jang, Nivetha Balasankaran, Wah-Peng Neo, T. Ling, Jia Wen Ting, Hongsik Yoon, Johannes Müller, Bert Pfefferling, Oliver Kallensee, Thomas Merbeth, Chim Seng Seet, J. Wong, Y. S. You, Steven Soss, T. H. Chan, S. Y. Siah:
Extended MTJ TDDB Model, and Improved STT-MRAM Reliability With Reduced Circuit and Process Variabilities. IRPS 2022: 6 - [c1]Zhouhang Jiang, Yi Xiao, Swetaki Chatterjee, Halid Mulaosmanovic, Stefan Dünkel, Steven Soss, Sven Beyer, Rajiv V. Joshi, Yogesh Singh Chauhan, Hussam Amrouch, Vijaykrishnan Narayanan, Kai Ni:
Asymmetric Double-Gate Ferroelectric FET to Decouple the Tradeoff Between Thickness Scaling and Memory Window. VLSI Technology and Circuits 2022: 395-396
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