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Yoshihira Hayashi

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1996
[j1]
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Hiraki Koike, Tetsuya Otsuki, Tohru Kimura, Masao Fukuma, Yoshihira Hayashi, Yukihiko Maejima, Kazushi Amanuma, Nobuhira Tanabe, Takeo Matsuki, Shinobu Saito, Tsuneo Takeuchi, Souta Kobayashi, Takemitsu Kunio, Takashi Hase, Yoichi Miyasaka, Nobuaki Shohata, Masahide Takada:
A 60-ns 1-Mb nonvolatile ferroelectric memory with a nondriven cell plate line write/read scheme. IEEE J. Solid State Circuits 31(11): 1625-1634 (1996)

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