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ORCIDYoshinori Ando
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2020 – today
- 2024
[c8]Hiraki Inoue, Takeya Hirose, Toshiki Mizuguchi, Yusuke Komura, Toshihiko Saito, Minato Ito, Kiyotaka Kimura, Tatsuya Onuki, Yoshinori Ando, Hiromi Sawai, Tsutomu Murakawa, Hitoshi Kunitake
, Takanori Matsuzaki, Hajime Kimura, Makoto Ikeda, Shunpei Yamazaki:
Heterogeneous Oxide Semiconductor FETs Comprising Planar FET and Vertical Channel FETs Monolithically Stacked on Si CMOS, Enabling 1-Mbit 3D DRAM. IMW 2024: 1-4- 2023
- [c7]H. Takahashi, Y. Okamoto, Toshiki Hamada, Yusuke Komura, S. Watanabe, K. Tsuda, H. Sawai, Takanori Matsuzaki, Yoshinori Ando, Tatsuya Onuki, Hitoshi Kunitake, Shunpei Yamazaki, D. Kobayashi, A. Ikuta, Takahiro Makino, Takeshi Ohshima:
Soft- and Hard-Error Radiation Reliability of 228 KB $3\mathrm{T}+1\mathrm{C}$ Oxide Semiconductor Memory. IRPS 2023: 1-6 - [c6]Yuto Yakubo, Kazuma Furutani, Kouhei Toyotaka, Haruki Katagiri, Masashi Fujita, Munehiro Kozuma, Yoshinori Ando, Yoshiyuki Kurokawa, Toru Nakura, Shunpei Yamazaki:
Crystalline Oxide Semiconductor-based 3D Bank Memory System for Endpoint Artificial Intelligence with Multiple Neural Networks Facilitating Context Switching and Power Gating. ISSCC 2023: 212-213 - [c5]Yuki Okamoto, Yusuke Komura, Toshiki Mizuguchi, Toshihiko Saito, Minato Ito, K. Kimura, Tatsuya Onuki, Yoshinori Ando, Hiromi Sawai, Tsutomu Murakawa, Hitoshi Kunitake, Takanori Matsuzaki, Hajime Kimura, M. Fujita, Makoto Ikeda, Shunpei Yamazaki:
1Mbit 1T1C 3D DRAM with Monolithically Stacked One Planar FET and Two Vertical FET Heterogeneous Oxide Semiconductor layers over Si CMOS. VLSI Technology and Circuits 2023: 1-2
2010 – 2019
- 2019
- [c4]Takahiko Ishizu, Yuto Yakubo, Kazuma Furutani, Atsuo Isobe, Masashi Fujita, Tomoaki Atsumi, Yoshinori Ando, Tsutomu Murakawa, Kiyoshi Kato, Masahiro Fujita, Shunpei Yamazaki:
A 48 MHz 880-nW Standby Power Normally-Off MCU with 1 Clock Full Backup and 4.69-μs Wakeup Featuring 60-nm Crystalline In-Ga-Zn Oxide BEOL-FETs. VLSI Circuits 2019: 48- - 2018
- [c3]Shuhei Maeda, Satoru Ohshita, Kazuma Furutani, Yuto Yakubo, Takahiko Ishizu, Tomoaki Atsumi, Yoshinori Ando, Daisuke Matsubayashi, Kiyoshi Kato, Takashi Okuda, Masahiro Fujita, Shunpei Yamazaki:
A 20ns-write 45ns-read and 1014-cycle endurance memory module composed of 60nm crystalline oxide semiconductor transistors. ISSCC 2018: 484-486 - 2017
- [j3]Tatsuya Onuki, Wataru Uesugi, Atsuo Isobe, Yoshinori Ando, Satoru Okamoto, Kiyoshi Kato, Tri Rung Yew, J. Y. Wu, Chi Chang Shuai, Shao Hui Wu, James Myers, Klaus Doppler, Masahiro Fujita, Shunpei Yamazaki:
Embedded Memory and ARM Cortex-M0 Core Using 60-nm C-Axis Aligned Crystalline Indium-Gallium-Zinc Oxide FET Integrated With 65-nm Si CMOS. IEEE J. Solid State Circuits 52(4): 925-932 (2017) - 2016
- [c2]Tatsuya Onuki, Wataru Uesugi, Hikaru Tamura, Atsuo Isobe, Yoshinori Ando, Satoru Okamoto, Kiyoshi Kato, Tri Rung Yew, Chen Bin Lin, J. Y. Wu, Chi Chang Shuai, Shao Hui Wu, James Myers, Klaus Doppler, Masahiro Fujita, Shunpei Yamazaki:
Embedded memory and ARM Cortex-M0 core using 60-nm C-axis aligned crystalline indium-gallium-zinc oxide FET integrated with 65-nm Si CMOS. VLSI Circuits 2016: 1-2 - 2012
- [c1]Yoshinori Ando:
Production of carbon nanotubes. MHS 2012: 4 - 2010
- [j2]Takaaki Hagiwara, Kou Yamada, Iwanori Murakami, Yoshinori Ando, Shun Matsuura, Satoshi Aoyama:
An Application of the Modified PID Control System for Heat Flow Experiment. Int. J. Autom. Technol. 4(5): 469-476 (2010)
1990 – 1999
- 1990
- [j1]Satoshi Murata, Yoshinori Ando, Masayuki Suzuki:
Design of a high gain regulator by the multiple time scale approach. Autom. 26(3): 585-591 (1990)
Coauthor Index
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