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Jihang Gao
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2020 – today
- 2024
- [c8]Jie Li, Linxiao Shen, Siyuan Ye, Jihang Gao, Jiajia Cui, Xinhang Xu, Zhuoyi Chen, Yaohui Luan, Yuanxin Bao, Ru Huang, Le Ye:
An 8b 1GS/s SAR ADC with Metastability-Based Resolution/Speed Enhancement and Self-Tuning Delay Achieving 47.2dB SNDR at Nyquist Input. CICC 2024: 1-2 - [c7]Xinhang Xu, Siyuan Ye, Yaohui Luan, Jihang Gao, Jie Li, Jiajia Cui, Hao Zhang, Ru Huang, Linxiao Shen, Le Ye:
3.10 A 0.69/0.58-PEF 1.6nW/24nW Capacitively Coupled Chopper Instrumentation Amplifier with an Input-Boosted First Stage in 22nm/180nm CMOS. ISSCC 2024: 72-74 - [c6]Siyuan Ye, Linxiao Shen, Jihang Gao, Jie Li, Zhuoyi Chen, Xinhang Xu, Jiajia Cui, Hao Zhang, Xing Zhang, Le Ye, Ru Huang:
9.1 A 2mW 70.7dB SNDR 200MS/s Pipelined-SAR ADC with Continuous-Time SAR-Assisted Detect-and-Skip and Open-then-Close Correlated Level Shifting. ISSCC 2024: 168-170 - [c5]Zhuoyi Chen, Linxiao Shen, Siyuan Ye, Jihang Gao, Jie Li, Jiajia Cui, Xinhang Xu, Yaohui Luan, Hao Zhang, Le Ye, Ru Huang:
9.4 A 182.3dB FoMs 50MS/s Pipelined-SAR ADC using Cascode Capacitively Degenerated Dynamic Amplifier and MSB Pre-Conversion Technique. ISSCC 2024: 174-176 - 2023
- [c4]Xinhang Xu, Linxiao Shen, Siyuan Ye, Jiayi Wu, Zhuoyi Chen, Jihang Gao, Jiajia Cui, Yihan Zhang, Ru Huang, Le Ye:
A 12.5-ppm/°C 1.086-nW/kHz Relaxation Oscillator with Clock-Gated Discrete-Time Comparator in 22nm CMOS Technology. ESSCIRC 2023: 121-124 - [c3]Jihang Gao, Linxiao Shen, Heyi Li, Siyuan Ye, Jie Li, Xinhang Xu, Jiajia Cui, Yunhung Gao, Ru Huang, Le Ye:
A 7.9fJ/Conversion-Step and 37.12aFrms Pipelined-SAR Capacitance-to-Digital Converter with kT/C Noise Cancellation and Incomplete-Settling-Based Correlated Level Shifting. ISSCC 2023: 346-347 - 2022
- [c2]Xinhang Xu, Siyuan Ye, Jihang Gao, Yihan Zhang, Linxiao Shen, Le Ye:
A 32-ppm/°C 0.9-nW/kHz Relaxation Oscillator with Event-Driven Architecture and Charge Reuse Technique. ISCAS 2022: 1973-1977 - [c1]Yihan Zhang, Chang Xue, Xiao Wang, Tianyi Liu, Jihang Gao, Peiyu Chen, Jinguang Liu, Linan Sun, Linxiao Shen, Jiayoon Ru, Le Ye, Ru Huang:
Single-Mode CMOS 6T-SRAM Macros With Keeper-Loading-Free Peripherals and Row-Separate Dynamic Body Bias Achieving 2.53fW/bit Leakage for AIoT Sensing Platforms. ISSCC 2022: 184-186
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last updated on 2024-10-07 22:23 CEST by the dblp team
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