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Vitezslav Benda

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2010 – 2019

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2012
[j9]
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Vitezslav Benda:
Progress in power semiconductor devices. Microelectron. Reliab. 52(3): 461-462 (2012)

2000 – 2009

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2008
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Vitezslav Benda:
Power semiconductor devices and integrated circuits. Microelectron. J. 39(6): 849-850 (2008)
[j7]
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J. Kozísek, Z. Machacek, Vitezslav Benda:
Monitoring of carrier lifetime distribution in high power semiconductor device technology. Microelectron. J. 39(6): 884-889 (2008)
2007
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Vitezslav Benda:
Power semiconductors. IET Circuits Devices Syst. 1(5): 313-314 (2007)
2006
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Vitezslav Benda:
The quest for optimum construction and technology of power semiconductor devices. Microelectron. J. 37(3): 189 (2006)
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Vitezslav Benda, M. Cerník, Václav Papez:
OCVD carrier lifetime in P⁺NN⁺ diode structures with axial carrier lifetime gradient. Microelectron. J. 37(3): 217-222 (2006)
2005
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Vitezslav Benda:
A note on trap recombination in high voltage device structures. Microelectron. Reliab. 45(2): 397-401 (2005)
2004
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Vitezslav Benda, E. M. Sankara Narayanan:
Advances in power semiconductor devices. Microelectron. J. 35(3): 223 (2004)
2003
[j1]
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Vitezslav Benda:
The quest for optimum technology of power semiconductor devices. Microelectron. Reliab. 43(4): 517 (2003)

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