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F. Saigné

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2003
[j4]
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Damien Zander, F. Saigné, A. Meinertzhagen, Christian Petit:
Contribution of oxide traps on defect creation and LVSILC conduction in ultra thin gate oxide devices. Microelectron. Reliab. 43(9-11): 1489-1493 (2003)
2002
[j3]
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F. Saigné, Olivier Quittard, Laurent Dusseau, F. Joffre, Coumar Oudéa, J. Fesquet, Jean Gasiot:
Prediction of long-term thermal behavior of an irradiated SRAM based on isochronal annealing measurements. Microelectron. Reliab. 42(3): 459-461 (2002)
2001
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Damien Zander, Christian Petit, F. Saigné, A. Meinertzhagen:
High field stress at and above room temperature in 2.3 nm thick oxides. Microelectron. Reliab. 41(7): 1023-1026 (2001)
[j1]
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D. Zander, F. Saigné, A. Meinertzhagen:
Creation and thermal annealing of interface states induced by uniform or localized injection in 2.3nm thick oxides. Microelectron. Reliab. 41(9-10): 1355-1360 (2001)

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