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2020 – today
- 2024
[j4]Junjie An, Zhidao Zhou, Linfang Wang, Wang Ye, Weizeng Li, Hanghang Gao, Zhi Li, Jinghui Tian, Yan Wang, Hongyang Hu, Jinshan Yue, Lingyan Fan, Shibing Long, Qi Liu, Chunmeng Dou:
Write-Verify-Free MLC RRAM Using Nonbinary Encoding for AI Weight Storage at the Edge. IEEE Trans. Very Large Scale Integr. Syst. 32(2): 283-290 (2024)- 2023
- [j3]Hao Jiang
, Jikai Lu, Chenggao Zhang, Shuangzhu Tang, Junjie An, Lingli Cheng, Jian Lu, Jinsong Wei, Keji Zhou, Xumeng Zhang, Tuo Shi, Qi Liu:
Multicore Spiking Neuromorphic Chip in 180-nm With ReRAM Synapses and Digital Neurons. IEEE J. Emerg. Sel. Topics Circuits Syst. 13(4): 975-985 (2023) - [j2]Wang Ye, Linfang Wang, Zhidao Zhou, Junjie An, Weizeng Li, Hanghang Gao, Zhi Li, Jinshan Yue, Hongyang Hu, Xiaoxin Xu, Jianguo Yang, Jing Liu, Dashan Shang, Feng Zhang, Jinghui Tian, Chunmeng Dou, Qi Liu, Ming Liu:
A 28-nm RRAM Computing-in-Memory Macro Using Weighted Hybrid 2T1R Cell Array and Reference Subtracting Sense Amplifier for AI Edge Inference. IEEE J. Solid State Circuits 58(10): 2839-2850 (2023) - 2022
- [c4]Linfang Wang, Junjie An, Wang Ye, Weizeng Li, Hanghang Gao, Yangu He, Jianfeng Gao, Jinshan Yue, Lingyan Fan, Chunmeng Dou:
RRAM Computing-in-Memory Using Transient Charge Transferring for Low-Power and Small-Latency AI Edge Inference. APCCAS 2022: 497-500 - [c3]Junjie An, Chaoqun Weng, Chenghua Wang, Zhihua Huang:
Recognizing the consciousness states of DOC patients by classifying EEG signal. CISP-BMEI 2022: 1-6 - 2021
- [c2]Jikai Lu, Jinsong Wei, Junjie An, Chenggao Zhang, Tuo Shi, Qi Liu:
RRAM-based Analog-Weight Spiking Neural Network Accelerator with in-situ Learning for IoT Applications. ASICON 2021: 1-4 - [c1]Linfang Wang, Wang Ye, Junjie An, Chunmeng Dou, Qi Liu, Meng-Fan Chang, Ming Liu:
Sparsity-Aware Clamping Readout Scheme for High Parallelism and Low Power Nonvolatile Computing-in-Memory Based on Resistive Memory. ISCAS 2021: 1-4
2010 – 2019
- 2019
- [j1]Junjie An, Shengdong Hu:
Heterojunction Diode Shielded SiC Split-Gate Trench MOSFET With Optimized Reverse Recovery Characteristic and Low Switching Loss. IEEE Access 7: 28592-28596 (2019)
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