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2020 – today
- 2022
[j2]Min-Woong Seo
, Myunglae Chu, Hyun-Yong Jung, Suksan Kim, Jiyoun Song, Daehee Bae, Sanggwon Lee, Junan Lee, Sung-Yong Kim, Jongyeon Lee, Minkyung Kim, Gwi-Deok Lee, Heesung Shim, Changyong Um, Changhwa Kim, In-Gyu Baek, Doowon Kwon, Hongki Kim, Hyuksoon Choi, Jonghyun Go, JungChak Ahn, Jaekyu Lee, Chang-Rok Moon, Kyupil Lee, Hyoung-Sub Kim:
2.45 e-RMS Low-Random-Noise, 598.5 mW Low-Power, and 1.2 kfps High-Speed 2-Mp Global Shutter CMOS Image Sensor With Pixel-Level ADC and Memory. IEEE J. Solid State Circuits 57(4): 1125-1137 (2022)- 2021
- [c4]Min-Woong Seo, Myunglae Chu, Hyun-Yong Jung, Suksan Kim, Jiyoun Song, Junan Lee, Sung-Yong Kim, Jongyeon Lee, Sung-Jae Byun, Daehee Bae, Minkyung Kim, Gwi-Deok Lee, Heesung Shim, Changyong Um, Changhwa Kim, In-Gyu Baek, Doowon Kwon, Hongki Kim, Hyuksoon Choi, Jonghyun Go, JungChak Ahn, Jaekyu Lee, Changrok Moon, Kyupil Lee, Hyoung-Sub Kim:
A 2.6 e-rms Low-Random-Noise, 116.2 mW Low-Power 2-Mp Global Shutter CMOS Image Sensor with Pixel-Level ADC and In-Pixel Memory. VLSI Circuits 2021: 1-2 - 2020
- [c3]Jaekyu Lee, Seung Sik Kim, In-Gyu Baek, Heesung Shim, Taehoon Kim, Taehyoung Kim, Jungchan Kyoung, Dongmo Im, Jinyong Choi, KeunYeong Cho, Daehoon Kim, Haemin Lim, Min-Woong Seo, JuYoung Kim, Doowon Kwon, Jiyoun Song, Jiyoon Kim, Minho Jang, Joosung Moon, Hyunchul Kim, Chong Kwang Chang, JinGyun Kim, Kyoungmin Koh, Hanjin Lim, JungChak Ahn, Hyeongsun Hong, Kyupil Lee, Ho-Kyu Kang:
5.5 A 2.1e- Temporal Noise and -105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology. ISSCC 2020: 102-104 - [c2]Hyunchul Kim, Jongeun Park, Insung Joe, Doowon Kwon, Joo Hyoung Kim, Dongsuk Cho, Taehun Lee, Changkyu Lee, Haeyong Park, Soojin Hong, Chongkwang Chang, Jingyun Kim, Hanjin Lim, Youngsun Oh, Yitae Kim, Seungjoo Nah, Sangil Jung, Jaekyu Lee, JungChak Ahn, Hyeongsun Hong, Kyupil Lee, Ho-Kyu Kang:
5.6 A 1/2.65in 44Mpixel CMOS Image Sensor with 0.7µm Pixels Fabricated in Advanced Full-Depth Deep-Trench Isolation Technology. ISSCC 2020: 104-106
2010 – 2019
- 2019
- [c1]Jungho Cha, Dongjae Shin, Yongwhak Shin, Kwansik Cho, Kyoungho Ha, Kyupil Lee, Ho-Kyu Kang:
Heterogeneous Integration of O-band LDs on bulk-Si Platform. OECC/PSC 2019: 1-3 - 2017
- [j1]Seung Uk Han, Youngyoun Lee, Yongdoo Kim, Jemin Park, Junhee Lim, Satoru Yamada, Hyeongsun Hong, Kyupil Lee, Gyoyoung Jin, Eunseung Jung:
The improvement of HEIP immunity using STI engineering at DRAM. Microelectron. Reliab. 76-77: 164-167 (2017)
Coauthor Index
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