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Thomas W. Sigmon

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1989
[j3]
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Robert Anholt, Thomas W. Sigmon:
A process and device model for GaAs MESFET technology: GATES. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 8(4): 350-359 (1989)
[j2]
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Michael D. Deal, S. E. Hansen, Thomas W. Sigmon:
SUPREM 3.5-process modeling of GaAs integrated circuit technology. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 8(9): 939-951 (1989)
1988
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Ettore Landi, Paul G. Carey, Thomas W. Sigmon:
Numerical simulation of the gas immersion laser doping (GILD) process in silicon. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 7(2): 205-214 (1988)

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