"A process and device model for GaAs MESFET technology: GATES."

Robert Anholt, Thomas W. Sigmon (1989)

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DOI: 10.1109/43.29589

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type: Journal Article

metadata version: 2020-09-24

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Robert Anholt, Thomas W. Sigmon:
A process and device model for GaAs MESFET technology: GATES. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 8(4): 350-359 (1989)

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