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Conference and Workshop Papers
- 2021
[c10]Shih-Chuan Chu, Chung-Hsien Wu, Yun-Wen Lin:
Speech Enhancement Based on Masking Approach Considering Speech Quality and Acoustic Confidence for Noisy Speech Recognition. APSIPA ASC 2021: 536-540- 2018
- [c9]Yo-Sheng Lin, Kai-Siang Lan, Hsin-Chen Lin, Yun-Wen Lin:
3 mW W-band CMOS injection-locked frequency divider with 23.5-GHz locking range. RWS 2018: 113-116 - [c8]Yo-Sheng Lin, Yun-Wen Lin, Jia-Wei Gao, Kai-Siang Lan:
High gain and high PAE 68∼94 GHz CMOS power amplifier using miniature zero-degree four-way current combiner. RWS 2018: 125-128 - [c7]Yo-Sheng Lin, Kai-Siang Lan, Hsin-Chen Lin, Yun-Wen Lin:
77 GHz phase-locked loop for automobile radar system in 90 nm CMOS technology. RWS 2018: 220-223 - 2017
- [c6]Yo-Sheng Lin, Kai-Siang Lan, Yun-Wen Lin, Hou-Ru Pan, Chih-Chung Chen, Chien-Chin Wang:
A 90-96 GHz CMOS down-conversion mixer with high conversion gain and excellent LO-RF isolation. RWS 2017: 162-165 - 2016
- [c5]Yo-Sheng Lin, Van Kien Nguyen, Jia-Wei Gao, Chien-Chin Wang, Yun-Wen Lin, Chih-Chung Chen:
A wideband power amplifier with 13.2 dBm Psat and 19.5% PAE for 60∼94 GHz wireless communication systems in 90 nm CMOS. RWS 2016: 95-98 - [c4]Yo-Sheng Lin, Chih-Chung Chen, Jay-Ming Liu, Yun-Wen Lin, Van Kien Nguyen:
A low noise figure and high conversion gain down-conversion mixer for 94 GHz image radar sensors in 90 nm CMOS. RWS 2016: 107-110 - [c3]Yo-Sheng Lin, Van Kien Nguyen, Hsin-Chen Lin, Chien-Yo Lee, Chien-Chin Wang, Chih-Chung Chen, Yun-Wen Lin:
A 7.2 mW 74∼82 GHz CMOS low-noise amplifier with 17.3±1.5 dB gain and 7.7±0.3 dB NF for automotive radar systems. RWS 2016: 111-114 - [c2]Yo-Sheng Lin, Yun-Wen Lin, Chien-Chin Wang, Chih-Chung Chen, Van Kien Nguyen:
Design and implementation of a high-performance CMOS dual balun for millimeter-wave star mixer and four-way power amplifier. RWS 2016: 119-122 - [c1]Yo-Sheng Lin, Chih-Chung Chen, Chien-Chin Wang, Yun-Wen Lin, Run-Chi Liu, Chien-Chu Ji:
A low power and high conversion gain 94 GHz up-conversion mixer with excellent I/O matching and LO-RF isolation in 90 nm CMOS. RWS 2016: 183-186
Coauthor Index
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