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2020 – today
- 2024
[j4]Mingyan Wang
, Yuanjie Lv, Heng Zhou, Peng Cui, Zhaojun Lin:
Modeling of the Gate Bias-Dependent Velocity-Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs. IEEE Access 12: 16989-16998 (2024)- [j3]Mingyan Wang, Yuanjie Lv, Heng Zhou, Peng Cui, Zhaojun Lin:
Corrections to "Modeling of the Gate Bias- Dependent Velocity-Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs". IEEE Access 12: 150485 (2024) - 2021
- [c5]Chen Wu, Xudong Fang, Zhihong Feng, Qiang Kang, Yuanjie Lv, Yuefei Yan, Zhuangde Jiang:
Ohmic Contact Characteristics of Silicon Carbide-based MEMS Devices. NEMS 2021: 334-338
2010 – 2019
- 2019
- [c4]Xubo Song, Yuangang Wang, Zhihong Feng, Yuanjie Lv, Yamin Zhang, Lisen Zhang, Shixiong Liang, Xin Tan, Shaobo Dun, Dabao Yang, Zhirong Zhang:
GaN Schottky Diode Model for THz Multiplier Design with Consideration of Self-heating Effect. ASICON 2019: 1-3 - 2018
- [j2]Mei Wang, Songzhi Zhang, Yuanjie Lv, Huimin Lu:
Anxiety Level Detection Using BCI of Miner's Smart Helmet. Mob. Networks Appl. 23(2): 336-343 (2018) - 2017
- [c3]Xingye Zhou, Xin Tan, Yuanjie Lv, Yuangang Wang, Xubo Song, Guodong Gu, Peng Xu, Hongyu Guo, Zhihong Feng, Shujun Cai:
Dynamic characteristics and related trapping effects of GaN-based Fin-MISHEMTs. ASICON 2017: 584-587 - [c2]Xubo Song, Cui Yu, Zezhao He, Qingbin Liu, Tingting Han, Shaobo Dun, Yuanjie Lv, Shujun Cai, Zhihong Feng:
Design and realization of a X-band graphene amplifier MMIC. ASICON 2017: 694-697 - 2015
- [c1]Xingye Zhou, Zhihong Feng, Yuanjie Lv, Xin Tan, Yuangang Wang, Guodong Gu, Xubo Song, Peng Xu, Shaobo Dun, Shujun Cai:
Dependency of current collapse on the device structure of GaN-based HEMTs. ASICON 2015: 1-4 - 2014
- [j1]Xiaobin Luo, Weihua Yu, Xin Lv, Yuanjie Lv, Shaobo Dun, Zhihong Feng:
Equivalent circuit model of millimeter-wave AlGaN/GaN HEMTs. IEICE Electron. Express 11(17): 20140613 (2014)
Coauthor Index
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