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M. W. Akram

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Journal Articles

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2014
[j6]
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  - https://dblp.org/rec/journals/jolpe/GhoshBMA14
Bahniman Ghosh, Punyasloka Bal, Partha Mondal, M. W. Akram:
Device Physics of Germanium-Junctionless Tunnel Field Effect Transistor and an Approach to Optimize I _on/I _off by Drain Engineering and Work Function Engineering. J. Low Power Electron. 10(1): 92-100 (2014)
[j5]
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Bahniman Ghosh, Neelam Surana, M. W. Akram, Ball Mukund Mani Tripathi:
In₀ ₂₅Ga₀ ₇₅As Channel Double Gate Junctionless Transistor. J. Low Power Electron. 10(1): 101-106 (2014)
[j4]
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M. W. Akram, Bahniman Ghosh:
Junctionless Silicon-Nanowire Gate-All-Around Tunnel Field Effect Transistor. J. Low Power Electron. 10(2): 286-292 (2014)
[j3]
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Bahniman Ghosh, Partha Mondal, M. W. Akram, Punyasloka Bal:
Impact of High- Spacer on Junctionless Transistor in Sub-Threshold Regime. J. Low Power Electron. 10(2): 293-296 (2014)
2013
[j2]
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Uzma Khan, Bahniman Ghosh, M. W. Akram:
Effect of Self Heating on Selective Buried Oxide and Silicon on Insulator Based Junctionless Transistors. J. Low Power Electron. 9(3): 295-301 (2013)
[j1]
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Bahniman Ghosh, Uzma Khan, Ball Mukund Mani Tripathi, M. W. Akram:
Ultrathin Compound Semiconductor in Bulk Planar Junctionless Transistor for High-Performance Nanoscale Transistors. J. Low Power Electron. 9(4): 490-495 (2013)

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