"Device Physics of Germanium-Junctionless Tunnel Field Effect Transistor ..."

Bahniman Ghosh et al. (2014)

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DOI: 10.1166/JOLPE.2014.1300

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type: Journal Article

metadata version: 2020-05-22

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Bahniman Ghosh, Punyasloka Bal, Partha Mondal, M. W. Akram:
Device Physics of Germanium-Junctionless Tunnel Field Effect Transistor and an Approach to Optimize I _on/I _off by Drain Engineering and Work Function Engineering. J. Low Power Electron. 10(1): 92-100 (2014)

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