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ORCIDAbhishek Banerjee 0003
Person information
- affiliation: ON Semiconductor, Oudenaarde, Belgium
Other persons with the same name
- Abhishek Banerjee — disambiguation page
- Abhishek Banerjee 0001 — Georgia Institute of Technology
- Abhishek Banerjee 0002 — The University of Alabama
- Abhishek Banerjee 0004 — Indian Institute of Management Raipur, India
- Abhishek Banerjee 0005
![[0000-0002-2796-4243]](https://dblp.uni-trier.de./img/orcid-mark.12x12.png "0000-0002-2796-4243")
— East China Normal University, Institute of Eco-Chongming, Shanghai, China - Abhishek Banerjee 0006 — University of Maryland, College Park, MD, USA
- Abhishek Banerjee 0007 — Idaho National Laboratory, Idaho Falls, ID, USA
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Journal Articles
- 2017
[j1]Alaleh Tajalli, Matteo Meneghini, Isabella Rossetto, Peter Moens, Abhishek Banerjee, Enrico Zanoni, Gaudenzio Meneghesso:
Field and hot electron-induced degradation in GaN-based power MIS-HEMTs. Microelectron. Reliab. 76-77: 282-286 (2017)
Conference and Workshop Papers
- 2020
- [c4]Fabrizio Masin, Matteo Meneghini, Eleonora Canato, Alessandro Barbato, Carlo De Santi, Arno Stockman, Abhishek Banerjee, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso:
Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions. IRPS 2020: 1-4 - 2019
- [c3]Eleonora Canato, Fabrizio Masin, Matteo Borga, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Arno Stockman, Abhishek Banerjee, Peter Moens:
µs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate. IRPS 2019: 1-6 - 2015
- [c2]Peter Moens, Abhishek Banerjee, P. Coppens, Aurore Constant, Piet Vanmeerbeek, Z. Li, F. Declercq, L. De Schepper, H. De Vleeschouwer, C. Liu, B. Padmanabhan, W. Jeon, J. Guo, A. Salih, Marnix Tack:
Technology and design of GaN power devices. ESSDERC 2015: 64-67 - [c1]Matteo Meneghini, Riccardo Silvestri, Stefano Dalcanale, Davide Bisi, Enrico Zanoni, Gaudenzio Meneghesso, Piet Vanmeerbeek, Abhishek Banerjee, Peter Moens:
Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors. IRPS 2015: 2
Coauthor Index
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