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Dimitris Pavlidis

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Journal Articles

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2018
[j11]
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  - journals/jcphy/SalinasPXOPJ18
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  - https://dblp.org/rec/journals/jcphy/SalinasPXOPJ18
Pablo Salinas, Dimitris Pavlidis, Ziqing Xie, H. Osman, Christopher C. Pain, Matthew David Jackson:
A discontinuous control volume finite element method for multi-phase flow in heterogeneous porous media. J. Comput. Phys. 352: 602-614 (2018)
2016
[j10]
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  - journals/jcphy/AdamPPSXFPMJ16
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  - https://dblp.org/rec/journals/jcphy/AdamPPSXFPMJ16
Alexandros Adam, Dimitris Pavlidis, James R. Percival, Pablo Salinas, Ziqing Xie, Fangxin Fang, Christopher C. Pain, A. H. Muggeridge, Matthew David Jackson:
Higher-order conservative interpolation between control-volume meshes: Application to advection and multiphase flow problems with dynamic mesh adaptivity. J. Comput. Phys. 321: 512-531 (2016)
[j9]
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  - journals/jcphy/YangXFPLP16
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Pan Yang, Jiansheng Xiang, Fangxin Fang, Dimitris Pavlidis, John-Paul Latham, Christopher C. Pain:
Modelling of fluid-structure interaction with multiphase viscous flows using an immersed-body method. J. Comput. Phys. 321: 571-592 (2016)
2012
[j8]
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  - journals/ieicet/JinPC12
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Chong Jin, Dimitris Pavlidis, Laurence Considine:
DC and High-Frequency Characteristics of GaN Schottky Varactors for Frequency Multiplication. IEICE Trans. Electron. 95-C(8): 1348-1353 (2012)
[j7]
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  - journals/ieicet/AbeKAHMRWNJP12
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Masayuki Abe, Noriaki Kogushi, Kian Siong Ang, René Hofstetter, Kumar Manoj, Louis Nicholas Retnam, Hong Wang, Geok Ing Ng, Chong Jin, Dimitris Pavlidis:
High-Performance Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application. IEICE Trans. Electron. 95-C(8): 1354-1362 (2012)
[j6]
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  - journals/ieicet/StolzCDDP12
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Arnaud Stolz, Laurence Considine, Elhadj Dogheche, Didier Decoster, Dimitris Pavlidis:
Prospective for Gallium Nitride-Based Optical Waveguide Modulators. IEICE Trans. Electron. 95-C(8): 1363-1368 (2012)
2010
[j5]
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  - journals/ieicet/SeoCAJPC10
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Sanghyun Seo, Eunjung Cho, Giorgi Aroshvili, Chong Jin, Dimitris Pavlidis, Laurence Considine:
Dispersion, High-Frequency and Power Characteristics of AlN/GaN Metal Insulator Semiconductor Field Effect Transistors with in-situ MOCVD Deposited Si₃N₄. IEICE Trans. Electron. 93-C(8): 1245-1250 (2010)
2008
[j4]
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  - journals/ieicet/SeoGZP08
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Sanghyun Seo, Kaustav Ghose, Guangyuan Zhao, Dimitris Pavlidis:
AlN/GaN Metal Insulator Semiconductor Field Effect Transistor on Sapphire Substrate. IEICE Trans. Electron. 91-C(7): 994-1000 (2008)
[j3]
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  - journals/ieicet/SigmundLISFPMH08
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Jochen Sigmund, Jean-François Lampin, Valentin Ivannikov, Cezary Sydlo, Michail Feiginov, Dimitris Pavlidis, Peter Meissner, Hans L. Hartnagel:
Low-Temperature Grown GaAsSb with Sub-Picosecond Photocarrier Lifetime for Continuous-Wave Terahertz Measurements. IEICE Trans. Electron. 91-C(7): 1058-1062 (2008)
2006
[j2]
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  - journals/ieicet/YilmazogluMPM06
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Oktay Yilmazoglu, Kabula Mutamba, Dimitris Pavlidis, Marie Rose Mbarga:
Strain Sensitivity of AlGaN/GaN HEMT Structures for Sensing Applications. IEICE Trans. Electron. 89-C(7): 1037-1041 (2006)
[j1]
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  - journals/ieicet/ChoPZHS06
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Eunjung Cho, Dimitris Pavlidis, Guangyuan Zhao, Seth M. Hubbard, Johannes Schwank:
Improvement of CO Sensitivity in GaN-Based Gas Sensors. IEICE Trans. Electron. 89-C(7): 1047-1051 (2006)

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