"Dispersion, High-Frequency and Power Characteristics of AlN/GaN Metal ..."

Sanghyun Seo et al. (2010)

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DOI: 10.1587/TRANSELE.E93.C.1245

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type: Journal Article

metadata version: 2020-04-11

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Sanghyun Seo, Eunjung Cho, Giorgi Aroshvili, Chong Jin, Dimitris Pavlidis, Laurence Considine:
Dispersion, High-Frequency and Power Characteristics of AlN/GaN Metal Insulator Semiconductor Field Effect Transistors with in-situ MOCVD Deposited Si₃N₄. IEICE Trans. Electron. 93-C(8): 1245-1250 (2010)

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