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Katsuya Miura
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2010 – 2019
- 2012
- [c3]Shoun Matsunaga, Masanori Natsui, Shoji Ikeda, Katsuya Miura, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu:
Implementation of a perpendicular MTJ-based read-disturb-tolerant 2T-2R nonvolatile TCAM based on a reversed current reading scheme. ASP-DAC 2012: 475-476 - 2010
- [j4]Masashi Kamiyanagi, Fumitaka Iga, Shoji Ikeda, Katsuya Miura, Jun Hayakawa, Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh:
Transient Characteristic of Fabricated Magnetic Tunnel Junction (MTJ) Programmed with CMOS Circuit. IEICE Trans. Electron. 93-C(5): 602-607 (2010) - [j3]Fumitaka Iga, Masashi Kamiyanagi, Shoji Ikeda, Katsuya Miura, Jun Hayakawa, Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh:
Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-End Metal Line of CMOS Circuits. IEICE Trans. Electron. 93-C(5): 608-613 (2010) - [j2]Riichiro Takemura, Takayuki Kawahara, Katsuya Miura, Hiroyuki Yamamoto, Jun Hayakawa, Nozomu Matsuzaki, Kazuo Ono, Michihiko Yamanouchi, Kenchi Ito, Hiromasa Takahashi, Shoji Ikeda, Haruhiro Hasegawa, Hideyuki Matsuoka, Hideo Ohno:
A 32-Mb SPRAM With 2T1R Memory Cell, Localized Bi-Directional Write Driver and '1'/'0' Dual-Array Equalized Reference Scheme. IEEE J. Solid State Circuits 45(4): 869-879 (2010)
2000 – 2009
- 2009
- [c2]Shoun Matsunaga, Jun Hayakawa, Shoji Ikeda, Katsuya Miura, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu:
MTJ-based nonvolatile logic-in-memory circuit, future prospects and issues. DATE 2009: 433-435 - 2008
- [j1]Takayuki Kawahara, Riichiro Takemura, Katsuya Miura, Jun Hayakawa, Shoji Ikeda, Young Min Lee, Ryutaro Sasaki, Yasushi Goto, Kenchi Ito, Toshiyasu Meguro, Fumihiro Matsukura, Hiromasa Takahashi, Hideyuki Matsuoka, Hideo Ohno:
2 Mb SPRAM (SPin-Transfer Torque RAM) With Bit-by-Bit Bi-Directional Current Write and Parallelizing-Direction Current Read. IEEE J. Solid State Circuits 43(1): 109-120 (2008) - 2007
- [c1]Takayuki Kawahara, Riichiro Takemura, Katsuya Miura, Jun Hayakawa, Shoji Ikeda, Young Min Lee, Ryutaro Sasaki, Yasushi Goto, Kenchi Ito, Toshiyasu Meguro, Fumihiro Matsukura, Hiromasa Takahashi, Hideyuki Matsuoka, Hideo Ohno:
2Mb Spin-Transfer Torque RAM (SPRAM) with Bit-by-Bit Bidirectional Current Write and Parallelizing-Direction Current Read. ISSCC 2007: 480-617
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