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2020 – today
- 2024
[c5]Dongchan Jeong, Seungkwon Kim, Seulki Park, Sanghyeon Lee, Sada-Aki Masuoka, Byungha Choi, Shincheol Min, Sanghoon Lee, Minseong Lee, Chang-Woo Sohn, Jaehun Jeong, Yuri Yasuda-Masuoka, Ja-Hum Ku:
Product Performance Aware 3rd Generation GAA Platform Transistor Design with Extreme Small Local Layout Effect and Transistor Variation. VLSI Technology and Circuits 2024: 1-2- [c4]Joosung Oh, Jaehyeon Park, Kiseok Suh, Kangmoon Lee, Sohee Hwang, Myeongjun Bak, Honghyun Kim, Baeseong Kwon, DongKyu Lee, Minkwan Kim, Seungmo Noh, Jongmin Lee, Soomin Cho, Gyuseong Kang, Hyun-Jin Shin, Yongsung Ji, Atsushi Okada, Ung-Hwan Pi, Kwangseok Kim, Younghyun Kim, Jeong-Heon Park, Seungpil Ko, Tae-Young Lee, Kyungtae Nam, Minkwon Cho, Boyoung Seo, Shinhee Han, Yoonjong Song, Kangho Lee, Ja-Hum Ku:
14nm FinFET Node Embedded MRAM Technology for Automotive Non-Volatile RAM Applications with Endurance Over 1E12-Cycles. VLSI Technology and Circuits 2024: 1-2 - 2023
- [c3]Jaehun Jeong, Sanghyeon Lee, Sada-Aki Masuoka, Shincheol Min, Sanghoon Lee, Seungkwon Kim, Taehun Myung, Byungha Choi, Chang-Woo Sohn, Sung Won Kim, Jeongmin Choi, Jungmin Park, Hyungjong Lee, Taeyoung Kim, Seokhoon Kim, Yuri Yasuda-Masuoka, Ja-Hum Ku, Gitae Jeong:
World's First GAA 3nm Foundry platform Technology (SF3) with Novel Multi-Bridge-Channel-FET (MBCFET™) Process. VLSI Technology and Circuits 2023: 1-2 - [c2]Kihwang Son, Seulki Park, Kyunghoon Jung, Jun-Gyu Kim
, Younggun Ko, Keonyong Cheon, Changkeun Yoon, Jiho Kim, Jaehun Jeong, Taehun Myung, Changmin Hong, Weonwi Jang, Min-Chul Sun, Sungil Jo, Ju-Youn Kim, Byungmoo Song, Yuri Yasuda-Masuoka, Ja-Hum Ku, Gitae Jeong:
Highly Reliable/Manufacturable 4nm FinFET Platform Technology (SF4X) for HPC Application with Dual-CPP/HP-HD Standard Cells. VLSI Technology and Circuits 2023: 1-2
2010 – 2019
- 2016
- [c1]Taejoong Song, Woojin Rim, Sunghyun Park, Yongho Kim, Jonghoon Jung, Giyong Yang, Sanghoon Baek, Jaeseung Choi, Bongjae Kwon, Yunwoo Lee, Sungbong Kim, Gyu-Hong Kim, Hyo-Sig Won, Ja-Hum Ku, Sunhom Steve Paak, E. S. Jung, Steve Sungho Park, Kinam Kim:
17.1 A 10nm FinFET 128Mb SRAM with assist adjustment system for power, performance, and area optimization. ISSCC 2016: 306-307
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