"Effects of Depth Variation of Substrate Dopant Impurity Concentration on ..."

Cheng-Sheng Pan (1986)

> Home

Details and statistics

DOI: —

access: closed

type: Book or Thesis

metadata version: 2023-09-14

- view
  - electronic edition via handle.net
- export record
  dblp key:
  - phd/us/Pan86
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/phd/us/Pan86
Cheng-Sheng Pan:
Effects of Depth Variation of Substrate Dopant Impurity Concentration on the Interface Trap Density Determination in Mos Devices (Semiconductor). University of Illinois Urbana-Champaign, USA, 1986

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.