"Development of Iridium-Based Gate Structure for Indium Aluminum ..."

Seiyon Kim (2005)

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type: Book or Thesis

metadata version: 2023-09-07

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Seiyon Kim:
Development of Iridium-Based Gate Structure for Indium Aluminum Arsenide/indium Gallium Arsenide/indium Phosphide Enhancement-Mode and Depletion-Mode High Electron Mobility Transistors. University of Illinois Urbana-Champaign, USA, 2005

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