"Relaxation effects in MOS devices due to tunnel exchange with ..."

Theodore L. Tewksbury (1992)

> Home

Details and statistics

DOI: —

access: closed

type: Book or Thesis

metadata version: 2017-05-12

- view
  - electronic edition @ mit.edu
- export record
  dblp key:
  - phd/ndltd/Tewksbury92
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/phd/ndltd/Tewksbury92
Theodore L. Tewksbury:
Relaxation effects in MOS devices due to tunnel exchange with near-interface oxide traps. Massachusetts Institute of Technology, Cambridge, MA, USA, 1992

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.