"Low Power and Suppressed Noise 6T, 7T SRAM Cell Using 18 nm FinFET."

T. Santosh Kumar, Suman Lata Tripathi (2023)

> Home

Details and statistics

DOI: 10.1007/S11277-023-10277-8

access: closed

type: Journal Article

metadata version: 2023-05-17

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/wpc/KumarT23
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/wpc/KumarT23
T. Santosh Kumar, Suman Lata Tripathi:
Low Power and Suppressed Noise 6T, 7T SRAM Cell Using 18 nm FinFET. Wirel. Pers. Commun. 130(1): 103-112 (2023)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.