"A 256-kb 9T Near-Threshold SRAM With 1k Cells per Bitline and Enhanced ..."

Ghasem Pasandi, Sied Mehdi Fakhraie (2015)

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DOI: 10.1109/TVLSI.2014.2377518

access: closed

type: Journal Article

metadata version: 2020-03-11

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Ghasem Pasandi, Sied Mehdi Fakhraie:
A 256-kb 9T Near-Threshold SRAM With 1k Cells per Bitline and Enhanced Write and Read Operations. IEEE Trans. Very Large Scale Integr. Syst. 23(11): 2438-2446 (2015)

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