"10T SRAM Using Half-VDD Precharge and Row-Wise Dynamically ..."

Naeem Maroof, Bai-Sun Kong (2017)

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DOI: 10.1109/TVLSI.2016.2637918

access: closed

type: Journal Article

metadata version: 2020-03-11

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  - https://dblp.org/rec/journals/tvlsi/MaroofK17
Naeem Maroof, Bai-Sun Kong:
10T SRAM Using Half-V_DD Precharge and Row-Wise Dynamically Powered Read Port for Low Switching Power and Ultralow RBL Leakage. IEEE Trans. Very Large Scale Integr. Syst. 25(4): 1193-1203 (2017)

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