"A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage."

Shijie Pan et al. (2024)

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DOI: 10.1109/TIM.2023.3335518

access: closed

type: Journal Article

metadata version: 2024-01-13

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Shijie Pan, Shiwei Feng, Xuan Li, Kun Bai, Xiaozhuang Lu, Xiang Zheng, Zixuan Feng, Yamin Zhang:
A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage. IEEE Trans. Instrum. Meas. 73: 1-12 (2024)

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