"Device Technologies of GaN-on-Si for Power Electronics: Enhancement-Mode ..."

Qi Zhou et al. (2017)

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DOI: 10.1109/TIE.2017.2652373

access: closed

type: Journal Article

metadata version: 2021-10-19

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Qi Zhou, Yi Yang, Kai Hu, Ruopu Zhu, Wanjun Chen, Bo Zhang:
Device Technologies of GaN-on-Si for Power Electronics: Enhancement-Mode Hybrid MOS-HFET and Lateral Diode. IEEE Trans. Ind. Electron. 64(11): 8971-8979 (2017)

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