"Temperature and Switching Rate Dependence of Crosstalk in Si-IGBT and SiC ..."

Saeed Jahdi et al. (2016)

> Home

Details and statistics

DOI: 10.1109/TIE.2015.2491880

access: closed

type: Journal Article

metadata version: 2021-10-14

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/tie/JahdiAGBRM16
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/tie/JahdiAGBRM16
Saeed Jahdi, Olayiwola Alatise, Jose Angel Ortiz Gonzalez, Roozbeh Bonyadi, Li Ran, Philip Mawby:
Temperature and Switching Rate Dependence of Crosstalk in Si-IGBT and SiC Power Modules. IEEE Trans. Ind. Electron. 63(2): 849-863 (2016)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.