"Design of High-Reliability Memory Cell to Mitigate Single Event Multiple ..."

Hongchen Li et al. (2021)

> Home

Details and statistics

DOI: 10.1109/TCSI.2021.3100900

access: closed

type: Journal Article

metadata version: 2021-11-03

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/tcasI/LiXQL21
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/tcasI/LiXQL21
Hongchen Li, Liyi Xiao, Chunhua Qi, Jie Li:
Design of High-Reliability Memory Cell to Mitigate Single Event Multiple Node Upsets. IEEE Trans. Circuits Syst. I Regul. Pap. 68(10): 4170-4181 (2021)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.