"Improved physical modeling of submicron MOSFETs based on parameter ..."

Chang G. Hwang, Robert W. Dutton (1989)

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DOI: 10.1109/43.29591

access: closed

type: Journal Article

metadata version: 2020-09-24

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Chang G. Hwang, Robert W. Dutton:
Improved physical modeling of submicron MOSFETs based on parameter extraction using 2-D simulation. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 8(4): 370-379 (1989)

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