"Study of p-(6H, 4H, 3C)SiC/n-GaN Heterojunction SDR, DDR IMPATT Diodes."

Yang Dai et al. (2024)

> Home

Details and statistics

DOI: 10.1109/TCAD.2024.3406477

access: closed

type: Journal Article

metadata version: 2024-12-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/tcad/DaiLGZCWZ24
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/tcad/DaiLGZCWZ24
Yang Dai, Yukun Li, Leiyu Gao, Jing Zuo, Cheng Chen, Zhongxu Wang, Wu Zhao:
Study of p-(6H, 4H, 3C)SiC/n-GaN Heterojunction SDR, DDR IMPATT Diodes. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 43(12): 4767-4774 (2024)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.