"A three-parameters-only MOSFET subthreshold current CAD model considering ..."

Ming-Jer Chen, Jib-Shin Ho (1997)

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DOI: 10.1109/43.602471

access: closed

type: Journal Article

metadata version: 2020-09-24

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Ming-Jer Chen, Jib-Shin Ho:
A three-parameters-only MOSFET subthreshold current CAD model considering back-gate bias and process variation. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 16(4): 343-352 (1997)

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