"A new approach for modeling the MOSFET using a simple, continuous ..."

William R. Bandy, Raymond S. Winton (1996)

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DOI: 10.1109/43.506135

access: closed

type: Journal Article

metadata version: 2020-09-24

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William R. Bandy, Raymond S. Winton:
A new approach for modeling the MOSFET using a simple, continuous analytical expression for drain conductance which includes velocity-saturation in a fundamental way. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 15(5): 475-483 (1996)

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