"T/R RF Switch with 150 ns Switching Time and over 100 dBc IMD for Wideband ..."

Behnam Samadpoor Rikan et al. (2022)

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DOI: 10.3390/S22020507

access: open

type: Journal Article

metadata version: 2022-02-23

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Behnam Samadpoor Rikan, David Kim, Kyung-Duk Choi, Arash Hejazi, Joon-Mo Yoo, YoungGun Pu, Seokkee Kim, Hyungki Huh, Yeonjae Jung, Kang-Yoon Lee:
T/R RF Switch with 150 ns Switching Time and over 100 dBc IMD for Wideband Mobile Applications in Thick Oxide SOI Process. Sensors 22(2): 507 (2022)

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