"InGaAs Diodes for Terahertz Sensing - Effect of Molecular Beam Epitaxy ..."

Vilius Palenskis et al. (2018)

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DOI: 10.3390/S18113760

access: open

type: Journal Article

metadata version: 2024-06-18

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Vilius Palenskis, Linas Minkevicius, Jonas Matukas, Domas Jokubauskis, Sandra Pralgauskaite, Dalius Seliuta, Bronislovas Cechavicius, Renata Butkute, Gintaras Valusis:
InGaAs Diodes for Terahertz Sensing - Effect of Molecular Beam Epitaxy Growth Conditions. Sensors 18(11): 3760 (2018)

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