"Gas Sensing Properties of Indium-Oxide-Based Field-Effect Transistor: A ..."

Chengyao Liang et al. (2024)

> Home

Details and statistics

DOI: 10.3390/S24186150

access: open

type: Journal Article

metadata version: 2024-10-21

- view
  - electronic edition via DOI (open access)
  authority control:
- export record
  dblp key:
  - journals/sensors/LiangCHZYDLHGZH24
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/sensors/LiangCHZYDLHGZH24
Chengyao Liang, Zhongyu Cao, Jiongyue Hao, Shili Zhao, Yuanting Yu, Yingchun Dong, Hangyu Liu, Chun Huang, Chao Gao, Yong Zhou, Yong He:
Gas Sensing Properties of Indium-Oxide-Based Field-Effect Transistor: A Review. Sensors 24(18): 6150 (2024)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.