default search action
"Magnetoresistive random access memory using magnetic tunnel junctions."
Saied Tehrani et al. (2003)
- Saied Tehrani, Jon M. Slaughter, Mark Deherrera, Brad N. Engel, Nicholas D. Rizzo, John Salter, Mark Durlam, Renu W. Dave, Jason Janesky, Brian Butcher, Ken Smith, Greg Grynkewich:
Magnetoresistive random access memory using magnetic tunnel junctions. Proc. IEEE 91(5): 703-714 (2003)
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.